Stacked amorphous silicon color sensors

Radiation hardness of amorphous silicon particle sensors

Radiation tests of 32 lm thick hydrogenated amorphous silicon n–i–p diodes have been performed using a high-energy 24 GeV proton beam up to fluences of 2 · 10 protons/cm. The results are compared to irradiation of similar 1 lm and 32 lm thick n–i–p diodes using a proton beam of 405 keV at a fluence of 3 · 10 protons/cm. All samples exhibited a drop of the photoconductivity and an increase in th...

Defects in Amorphous Semiconductors: Amorphous Silicon

Defects in disordered (amorphous) semiconductors are discussed, with an emphasis on hydrogenated amorphous silicon. The general differences between defect phenomena in crystalline and amorphous hosts are described, and the special importance of the electron–phonon coupling is stressed. Detailed calculations for amorphous Si are presented using accurate first principles (density-functional) tech...

Multilayered Amorphous Silicon Structures

Amorphous Silicon Flat Panel Imagers for Medical Application

A new gamma camera based on hydrogenated amorphous silicon (a-Si:H) pixel arrays to be used in nuclear medicine is introduced. Various performance characteristics of a-Si:H imagers are reviewed and compared with those of currently used equipment. An important component in the a-Si:H imager is the scintillator screen. A new approach for fabrication of high resolution CsI(Tl) scintillator layers,...

Self-Diffusion in Amorphous Silicon.

The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on ^{29}Si/^{nat}Si heterostructures using neutron reflectometry and secondary ion mass spectrometry. The diffusivities follow the Arrhenius law in the temperature range between 550 and 700 °C with an activation energy of (4.4±0.3)  eV. In comparison with single crystalline silicon the diffusivities are tre...